Nuri, Abdullah Z. (2026) ANALYTICAL AND SIMULATED STUDY OF A BIPOLAR TRANSISTOR'S INPUT CHARACTERISTICS USING NI MULTISIM 14.2 PROGRAM. Journal for Technology and Science, 3 (3). ISSN 3047-4337

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Abstract

Objective: This research presents a comprehensive study of the input characteristics of an NPN transistor in a common-emitter configuration using NI Multisim 14.2 at a constant output voltage across the transistor (VCE = 2 V). Method: The research methodology focuses on the increase in base current (Ig)   as a result of the voltage increase (VBE). The switching voltage, i.e., the critical operating point, is determined using the dynamic resistance equation. Results: The results obtained from NI Multisim 14.2 and the mathematical equations for a silicon diode that accepts or consumes a lower voltage (approximately 0.8 V) are crucial. Novelty: The most important conclusion of this research is that these calculations, relating to base current, emitter-base voltage, and a low dynamic resistance (7.58 Ω), form the basis for designing electronic circuits and the switching and amplification processes they undergo.

Item Type:	Article
Uncontrolled Keywords:	Transistor, Dynamic resistance, Input characteristics, NI multisim 14.2, Shockley equation
Subjects:	H Social Sciences
Depositing User:	admin eprints
Date Deposited:	13 Jul 2026 07:03
Last Modified:	13 Jul 2026 07:03
URI:	http://eprints.umsida.ac.id/id/eprint/16764

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