Sinchana V, Bhat and Suchi, C and Tanuja, C and Yashaswini, M A (2025) Compact Models and the Physics of Nanoscale FETs: Survey Paper. International Journal of Trend in Scientific Research and Development, 9 (3). pp. 751-756. ISSN 2456-6470

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Abstract

This work discusses the compact model and the physics of nanoscale field-effect transistors (FETs), specifically the Virtual Source (VS) model. It points out how conventional compact models, originally formulated for microscale devices, can be extended to characterize nanoscale FETs by redefining fundamental parameters such as mobility and saturation velocity. The authors employ the Landauer method to give physical meaning to these parameters and demonstrate that transport in nanoscale FETs is diffusion-limited close to the virtual source, both below and above threshold. The work also addresses how current saturation is controlled by velocity saturation near the source instead of the maximum channel velocity and why conventional models are still valid even though the nanoscale has different transport mechanisms. The findings seek to close the gap between compact modeling and device physics, providing a better understanding of nanoscale FET behavior for both circuit design and research purposes.

Item Type:	Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Postgraduate > Master's of Islamic Education
Depositing User:	Journal Editor
Date Deposited:	03 Jun 2025 12:45
Last Modified:	03 Jun 2025 12:45
URI:	http://eprints.umsida.ac.id/id/eprint/16163

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