Yashaswini, M A and Suchi, C and Sinchana V, Bhat and Tanuja, C (2025) Analytic Description of Short-Channel Effects in Fully-Depleted Double-Gate and Cylindrical, Surrounding-Gate MOSFETs: Survey Paper. International Journal of Trend in Scientific Research and Development, 9 (3). pp. 715-720. ISSN 2456-6470
![]() |
Text
ijtsrd80031.pdf Download (795kB) |
Abstract
This paper presents a detailed review and analysis of key advancements in modeling and understanding short-channel effects in advanced MOSFET architectures, including double-gate and carbon nanotube FETs. Emphasis is placed on electrostatic scale lengths, quantum transport, phonon scattering, and circuit-level implications of nanoscale device behavior. The study compiles and critiques influential models and simulations that guide the design of high-performance, low-leakage transistors compatible with future CMOS technologies.
Item Type: | Article |
---|---|
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Divisions: | Postgraduate > Master's of Islamic Education |
Depositing User: | Journal Editor |
Date Deposited: | 03 Jun 2025 12:49 |
Last Modified: | 03 Jun 2025 12:49 |
URI: | http://eprints.umsida.ac.id/id/eprint/16165 |
Actions (login required)
![]() |
View Item |