Yashaswini, M A and Suchi, C and Sinchana V, Bhat and Tanuja, C (2025) Analytic Description of Short-Channel Effects in Fully-Depleted Double-Gate and Cylindrical, Surrounding-Gate MOSFETs: Survey Paper. International Journal of Trend in Scientific Research and Development, 9 (3). pp. 715-720. ISSN 2456-6470

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Abstract

This paper presents a detailed review and analysis of key advancements in modeling and understanding short-channel effects in advanced MOSFET architectures, including double-gate and carbon nanotube FETs. Emphasis is placed on electrostatic scale lengths, quantum transport, phonon scattering, and circuit-level implications of nanoscale device behavior. The study compiles and critiques influential models and simulations that guide the design of high-performance, low-leakage transistors compatible with future CMOS technologies.

Item Type:	Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Postgraduate > Master's of Islamic Education
Depositing User:	Journal Editor
Date Deposited:	03 Jun 2025 12:49
Last Modified:	03 Jun 2025 12:49
URI:	http://eprints.umsida.ac.id/id/eprint/16165

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