Suchi, C and Sinchana V, Bhat and Tanuja, C and Yashaswini, M A (2025) The Role of Metal-Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors: Survey Paper. International Journal of Trend in Scientific Research and Development, 9 (3). pp. 745-750. ISSN 2456-6470

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Abstract

Single-walled carbon nanotubes (SWNTs) have proven to be essential building blocks for nanoscale electronics owing to their outstanding electrical characteristics and quasi-one-dimensional geometry. The present research examines the electron-phonon interaction in metallic SWNTs, an important factor affecting charge transport behavior under varying bias conditions. With a new experimental technique where an atomic force microscope (AFM) tip was used as a mobile electrical contact, resistance was measured for different nanotube lengths and electrical biases. At low bias, the electron mean free path was determined to be about 1.6 µm, in agreement with weak acoustic phonon scattering. But at high bias, a sudden drop in the mean free path to about 10 nm was seen, caused by fast scattering by optical and zone-boundary phonons. Theoretical computations based on Boltzmann transport theory validate the experimental findings, providing quantitative information about current saturation and high-field transport behavior. These studies significantly further the knowledge of intrinsic transport limitations in SWNTs and recommend their use in high-performance nanoscale devices.

Item Type:	Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Postgraduate > Master's of Islamic Education
Depositing User:	Journal Editor
Date Deposited:	03 Jun 2025 12:47
Last Modified:	03 Jun 2025 12:47
URI:	http://eprints.umsida.ac.id/id/eprint/16164

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